HX2300A
MOSFET. Datasheet pdf. Equivalent
Type Designator: HX2300A
Marking Code: 00A8C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 2.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 120
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
SOT23
HX2300A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HX2300A
Datasheet (PDF)
..1. Size:184K hx
hx2300a.pdf 
SOT-23 Plastic-Encapsulate TransistorsHX2300AMOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:00A8CMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsV Drain-Source voltage 20 VDSV Gate-Source voltage 8 VGSI Drain current 2.5 ADP Power Dissipation 1 WDTj Junction Temperature 150
8.1. Size:184K hx
hx2300.pdf
SOT-23-3 Plastic-Encapsulate TransistorsHX2300MOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:00A8CMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 8 VID Drain current 3.6 APD Power Dissipation 1 WTj Junction Temperature 150 Ts
9.1. Size:183K hx
hx2305.pdf
SOT-23-3Plastic-Encapsulate TransistorsHX2305MOSFET(P-Channel)FEATURESTrenchFET Power MOSFETMARKING: A5SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 V-3 AID Drain currentPD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHAR
9.2. Size:181K hx
hx2302a.pdf
SOT-23 Plastic-Encapsulate TransistorsHX2302A MOSFET(N-Channel)FEATURESTrenchFET Power MOSFETMARKING:A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 12 VID Drain current 2.5 APD Power Dissipation 0.9 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL C
9.3. Size:316K hx
hx2301.pdf
SOT-23 -3Plastic-Encapsulate Transistors HX2301 MOSFET(P-Channel)FEATURES TrenchFET Power MOSFET MARKING: A1SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V-2.8 AID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 E
9.4. Size:181K hx
hx2301a.pdf
SOT-23 Plastic-Encapsulate TransistorsHX2301A MOSFET(P-Channel)FEATURESPWM applicationsLoad switchPower managementMARKING: A1SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 VID Drain current -2.5 APD Power Dissipation 0.9 WTj Junction Temperature 150 Tstg Storage Temperature
9.5. Size:253K hx
hx2302.pdf
SOT-23-3 Plastic-Encapsulate Transistors HX2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 8 VID Drain current 3.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 EL
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