IXFA18N65X2 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFA18N65X2 datasheet

..1. Size:336K ixys
ixfa18n65x2 ixfp18n65x2 ixfh18n65x2.pdf pdf_icon

X2-Class HiPerFETTM VDSS = 650V IXFA18N65X2 Power MOSFET ID25 = 18A IXFP18N65X2 RDS(on) 200m IXFH18N65X2 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 VDSS TJ = 25 C to 150 C 650 V (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VGS

6.1. Size:183K ixys
ixfa18n60x ixfh18n60x ixfp18n60x.pdf pdf_icon

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFA18N60X Power MOSFET ID25 = 18A IXFP18N60X RDS(on) 230m IXFH18N60X TO-263 AA (IXFA) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to

8.1. Size:208K ixys
ixfa180n10t2 ixfp180n10t2.pdf pdf_icon

Preliminary Technical Information TrenchT2TM HiperFETTM VDSS = 100V IXFA180N10T2 Power MOSFET ID25 = 180A IXFP180N10T2 RDS(on) 6m N-Channel Enhancement Mode TO-263 AA (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V TO-220AB (IXFP) VDGR TJ = 25 C to 175 C, RG

8.2. Size:204K inchange semiconductor
ixfa180n10t2.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXFA180N10T2 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAX

Otros transistores... SVS20N60SD2 , SVS20N60SD2TR , SVS20N60P7D2 , SVT044R5NT , SVT044R5ND , SVT044R5NL5 , SVT088R0NT , SVT13N06SA , 4435 , IXFA60N25X3 , IXFA80N25X3 , IXFH18N65X2 , IXFH40N85X , IXFH50N85X , IXFH90N20X3 , IXFK50N85X , IXFK80N65X2 .