BSC016N06NST Todos los transistores

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BSC016N06NST MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM Power-MOSFET, 60 V 8 7 6 Features 5 Optimized for synchronous rectification 175 C rated 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Qualified according to JEDEC1) for target applications 3 Pb-free lead plating; RoHS compliant 2 1

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BSC016N06NS OptiMOSTM Power-MOSFET Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 1.6 mW 100% avalanche tested ID 100 A Superior thermal resistance QOSS 81 nC N-channel QG(0V..10V) 71 nC Qualified according to JEDEC1) for target applications PG-TDSON-8 FL Pb-free lead plating; RoHS compliant enlarged source

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BSC016N03MS G Product Summary OptiMOS 3 M-Series Power-MOSFET V 30 V DS Features R V =10 V 1.6 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 2 GS Low FOMSW for High Frequency SMPS I 100 A D 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product