BSC016N06NST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC016N06NST
Código: 016N06NT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 31 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.3 V
Carga de la puerta (Qg): 71 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 1200 pF
Resistencia entre drenaje y fuente RDS(on): 0.0016 Ohm
Paquete / Cubierta: SUPERSO8
Búsqueda de reemplazo de MOSFET BSC016N06NST
BSC016N06NST Datasheet (PDF)
bsc016n06nst.pdf
BSC016N06NSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 60 V876Features5 Optimized for synchronous rectification 175 C rated1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Qualified according to JEDEC1) for target applications3 Pb-free lead plating; RoHS compliant 21
bsc016n06ns.pdf
BSC016N06NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 1.6 mW 100% avalanche testedID 100 A Superior thermal resistanceQOSS 81 nC N-channelQG(0V..10V) 71 nC Qualified according to JEDEC1) for target applicationsPG-TDSON-8 FL Pb-free lead plating; RoHS compliantenlarged source
bsc016n04lsg.pdf
BSC016N04LS GOptiMOS3 Power-TransistorProduct SummaryV 40 VFeatures DSR 1.6m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc016n03ls.pdf
BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc016n03ls .pdf
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bsc016n03msg.pdf
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bsc016n03lsg.pdf
BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc016n03ms.pdf
BSC016N03MS GProduct SummaryOptiMOS3 M-Series Power-MOSFETV 30 VDSFeaturesR V =10 V 1.6mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 2GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
