BSC016N06NST MOSFET Datasheet: N-Ch, 60V, 31A. Full specification with pinout and replacement list

BSC016N06NST Specs and Replacement

Type Designator: BSC016N06NST

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm

Package: SUPERSO8

BSC016N06NST substitution

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BSC016N06NST datasheet

..1. Size:1264K infineon
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BSC016N06NST MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM Power-MOSFET, 60 V 8 7 6 Features 5 Optimized for synchronous rectification 175 C rated 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Qualified according to JEDEC1) for target applications 3 Pb-free lead plating; RoHS compliant 2 1 ... See More ⇒

3.1. Size:566K infineon
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BSC016N06NS OptiMOSTM Power-MOSFET Product Summary Features VDS 60 V Optimized for synchronous rectification RDS(on),max 1.6 mW 100% avalanche tested ID 100 A Superior thermal resistance QOSS 81 nC N-channel QG(0V..10V) 71 nC Qualified according to JEDEC1) for target applications PG-TDSON-8 FL Pb-free lead plating; RoHS compliant enlarged source ... See More ⇒

6.1. Size:311K infineon
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