BSC016N06NST MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC016N06NST
Marking Code: 016N06NT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 3 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.3 V
Maximum Drain Current |Id|: 31 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 71 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 1200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0016 Ohm
Package: SUPERSO8
BSC016N06NST Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC016N06NST Datasheet (PDF)
bsc016n06nst.pdf
BSC016N06NSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 60 V876Features5 Optimized for synchronous rectification 175 C rated1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Qualified according to JEDEC1) for target applications3 Pb-free lead plating; RoHS compliant 21
bsc016n06ns.pdf
BSC016N06NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 1.6 mW 100% avalanche testedID 100 A Superior thermal resistanceQOSS 81 nC N-channelQG(0V..10V) 71 nC Qualified according to JEDEC1) for target applicationsPG-TDSON-8 FL Pb-free lead plating; RoHS compliantenlarged source
bsc016n04lsg.pdf
BSC016N04LS GOptiMOS3 Power-TransistorProduct SummaryV 40 VFeatures DSR 1.6m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc016n03ls.pdf
BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc016n03ls .pdf
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bsc016n03msg.pdf
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bsc016n03lsg.pdf
BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc016n03ms.pdf
BSC016N03MS GProduct SummaryOptiMOS3 M-Series Power-MOSFETV 30 VDSFeaturesR V =10 V 1.6mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 2GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
