BSC0805LS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSC0805LS
   Código: 0805LS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 26 nC
   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: SUPERSO8

Búsqueda de reemplazo de MOSFET BSC0805LS

BSC0805LS Datasheet (PDF)

..1. Size:1075K infineon
bsc0805ls.pdf

BSC0805LSMOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationQualified according to J

8.1. Size:524K infineon
bsc080n03msg.pdf

BSC080N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 8 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 10.2 100% avalanche testedID 53 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

8.2. Size:1096K infineon
bsc0804ls.pdf

BSC0804LSMOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Ideal for high-frequency switching 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 Optimized for chargersProduct validationQualified acco

8.3. Size:539K infineon
bsc080n03msg5.pdf

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8.4. Size:550K infineon
bsc080p03lsg.pdf

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8.5. Size:521K infineon
bsc080n03lsg.pdf

BSC080N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 8 mW Optimized technology for DC/DC convertersID 53 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

8.6. Size:485K infineon
bsc080n03ms.pdf

8.7. Size:482K infineon
bsc080n03ls.pdf

8.8. Size:688K infineon
bsc080n03ls5.pdf

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Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CEU20N06 | IPI50R199CP

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