Справочник MOSFET. BSC0805LS

 

BSC0805LS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSC0805LS
   Маркировка: 0805LS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 26 nC
   trⓘ - Время нарастания: 3.6 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: SUPERSO8

 Аналог (замена) для BSC0805LS

 

 

BSC0805LS Datasheet (PDF)

 ..1. Size:1075K  infineon
bsc0805ls.pdf

BSC0805LS
BSC0805LS

BSC0805LSMOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationQualified according to J

 8.1. Size:524K  infineon
bsc080n03msg.pdf

BSC0805LS
BSC0805LS

BSC080N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 8 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 10.2 100% avalanche testedID 53 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

 8.2. Size:1096K  infineon
bsc0804ls.pdf

BSC0805LS
BSC0805LS

BSC0804LSMOSFETSuperSO8OptiMOSTM5 Power-Transistor, 100 V5867Features 7685 Ideal for high-frequency switching 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14 Optimized for chargersProduct validationQualified acco

 8.3. Size:539K  infineon
bsc080n03msg5.pdf

BSC0805LS
BSC0805LS

% ! % D %0S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD F:7D?3

 8.4. Size:550K  infineon
bsc080p03lsg.pdf

BSC0805LS
BSC0805LS

& $ & $ $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures VDSQ * 92??6= 8 m DS(on) maxQ ?92?46>6?D >@56 0 ADQ &@8:4 =6F6=Q T @A6B2D:?8 D6>A6B2DEB6Q F2=2?496 B2D65 + @", 4@>A=:2?DPGTDSON8Q .8C . CA64:2==I CE:D65 7@B ?@D63@@

 8.5. Size:521K  infineon
bsc080n03lsg.pdf

BSC0805LS
BSC0805LS

BSC080N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 8 mW Optimized technology for DC/DC convertersID 53 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 8.6. Size:485K  infineon
bsc080n03ms.pdf

BSC0805LS
BSC0805LS

BSC080N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 8 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 10.2 100% avalanche testedID 53 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)

 8.7. Size:482K  infineon
bsc080n03ls.pdf

BSC0805LS
BSC0805LS

BSC080N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 8 mW Optimized technology for DC/DC convertersID 53 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio

 8.8. Size:688K  infineon
bsc080n03ls5.pdf

BSC0805LS
BSC0805LS

& " & E $;B1= !#& '$=;0@/? &@99-=DFeatures D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @"- 4

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top