BSZ070N08LS5 Todos los transistores

 

BSZ070N08LS5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSZ070N08LS5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TSDSON-8
 

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BSZ070N08LS5 Datasheet (PDF)

 ..1. Size:1428K  infineon
 bsz070n08ls5.pdf pdf_icon

BSZ070N08LS5

BSZ070N08LS5MOSFETTSDSON-8 FLOptiMOS5 Power-Transistor, 80 V(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian

 8.1. Size:1446K  infineon
 bsz0703ls.pdf pdf_icon

BSZ070N08LS5

BSZ0703LSMOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for chargers 100% avalanche tested Superior thermal resistance N-channel, Logic level Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified for Standard Grade applications Ideal for high-frequency switchi

 9.1. Size:243K  infineon
 bsz076n06ns3.pdf pdf_icon

BSZ070N08LS5

TypeBSZ076N06NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 7.6mDS(on),max Optimized technology for DC/DC convertersI 20 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; R

 9.2. Size:1358K  infineon
 bsz075n08ns5.pdf pdf_icon

BSZ070N08LS5

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VBSZ075N08NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VBSZ075N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv

MOSTRAR MÁS

Otros transistores... BSZ037N06LS5 , BSZ039N06NS , BSZ040N06LS5 , BSZ0500NSI , BSZ0589NS , BSZ063N04LS6 , BSZ065N06LS5 , BSZ0703LS , 7N65 , BSZ0909ND , BSZ0994NS , BSZ099N06LS5 , BSZ146N10LS5 , BSZ300N15NS5 , BTS247Z , IAUC100N10S5N040 , IAUC120N04S6L008 .

 

 
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