BSZ070N08LS5 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BSZ070N08LS5
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4.8 ns
Cossⓘ - Выходная емкость: 280 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
Тип корпуса: TSDSON-8
Аналог (замена) для BSZ070N08LS5
BSZ070N08LS5 Datasheet (PDF)
bsz070n08ls5.pdf

BSZ070N08LS5MOSFETTSDSON-8 FLOptiMOS5 Power-Transistor, 80 V(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian
bsz0703ls.pdf

BSZ0703LSMOSFETTSDSON-8 FLOptiMOSTM Power-Transistor, 60 V(enlarged source interconnection)Features Optimized for chargers 100% avalanche tested Superior thermal resistance N-channel, Logic level Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified for Standard Grade applications Ideal for high-frequency switchi
bsz076n06ns3.pdf

TypeBSZ076N06NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 60 VDS Ideal for high frequency switching and sync. rec.R 7.6mDS(on),max Optimized technology for DC/DC convertersI 20 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; R
bsz075n08ns5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VBSZ075N08NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VBSZ075N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv
Другие MOSFET... BSZ037N06LS5 , BSZ039N06NS , BSZ040N06LS5 , BSZ0500NSI , BSZ0589NS , BSZ063N04LS6 , BSZ065N06LS5 , BSZ0703LS , 7N65 , BSZ0909ND , BSZ0994NS , BSZ099N06LS5 , BSZ146N10LS5 , BSZ300N15NS5 , BTS247Z , IAUC100N10S5N040 , IAUC120N04S6L008 .
History: IXFP26N50P3
History: IXFP26N50P3



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