IMW120R060M1H Todos los transistores

 

IMW120R060M1H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IMW120R060M1H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 23 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 58 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.083 Ohm
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de IMW120R060M1H MOSFET

   - Selección ⓘ de transistores por parámetros

 

IMW120R060M1H Datasheet (PDF)

 ..1. Size:1124K  infineon
 imw120r060m1h.pdf pdf_icon

IMW120R060M1H

IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 6.1. Size:1125K  infineon
 imw120r090m1h.pdf pdf_icon

IMW120R060M1H

IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 6.2. Size:1365K  infineon
 aimw120r045m1.pdf pdf_icon

IMW120R060M1H

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

 6.3. Size:1126K  infineon
 imw120r030m1h.pdf pdf_icon

IMW120R060M1H

IMW120R030M1H IMW120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

MOSTRAR MÁS

Otros transistores... BSZ300N15NS5 , BTS247Z , IAUC100N10S5N040 , IAUC120N04S6L008 , IAUC120N04S6N009 , IAUS180N04S4N015 , IMW120R030M1H , IMW120R045M1 , AON7410 , IMW120R090M1H , IMW120R140M1H , IMW120R220M1H , IMW120R350M1H , IMW65R027M1H , IMW65R048M1H , IMW65R072M1H , IMW65R107M1H .

History: PNMTOF600V5 | AP2613GYT-HF

 

 
Back to Top

 


 
.