IMW120R060M1H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IMW120R060M1H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 23 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 58 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.083 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de IMW120R060M1H MOSFET
- Selecciónⓘ de transistores por parámetros
IMW120R060M1H datasheet
imw120r060m1h.pdf
IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control
imw120r090m1h.pdf
IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control
aimw120r045m1.pdf
AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c
imw120r030m1h.pdf
IMW120R030M1H IMW120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control
Otros transistores... BSZ300N15NS5 , BTS247Z , IAUC100N10S5N040 , IAUC120N04S6L008 , IAUC120N04S6N009 , IAUS180N04S4N015 , IMW120R030M1H , IMW120R045M1 , SPP20N60C3 , IMW120R090M1H , IMW120R140M1H , IMW120R220M1H , IMW120R350M1H , IMW65R027M1H , IMW65R048M1H , IMW65R072M1H , IMW65R107M1H .
History: BSC320N20NS3G | GTT8205S
History: BSC320N20NS3G | GTT8205S
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