IMW120R060M1H PDF and Equivalents Search

 

IMW120R060M1H Specs and Replacement

Type Designator: IMW120R060M1H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 23 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm

Package: TO247

IMW120R060M1H substitution

- MOSFET ⓘ Cross-Reference Search

 

IMW120R060M1H datasheet

 ..1. Size:1124K  infineon
 imw120r060m1h.pdf pdf_icon

IMW120R060M1H

IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control... See More ⇒

 6.1. Size:1125K  infineon
 imw120r090m1h.pdf pdf_icon

IMW120R060M1H

IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control... See More ⇒

 6.2. Size:1365K  infineon
 aimw120r045m1.pdf pdf_icon

IMW120R060M1H

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c... See More ⇒

 6.3. Size:1126K  infineon
 imw120r030m1h.pdf pdf_icon

IMW120R060M1H

IMW120R030M1H IMW120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control... See More ⇒

SHOW MORE

Detailed specifications: BSZ300N15NS5, BTS247Z, IAUC100N10S5N040, IAUC120N04S6L008, IAUC120N04S6N009, IAUS180N04S4N015, IMW120R030M1H, IMW120R045M1, SPP20N60C3, IMW120R090M1H, IMW120R140M1H, IMW120R220M1H, IMW120R350M1H, IMW65R027M1H, IMW65R048M1H, IMW65R072M1H, IMW65R107M1H

Keywords - IMW120R060M1H MOSFET specs

 IMW120R060M1H cross reference

 IMW120R060M1H equivalent finder

 IMW120R060M1H pdf lookup

 IMW120R060M1H substitution

 IMW120R060M1H replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.