IMW120R060M1H Datasheet and Replacement

IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

IMW120R030M1H IMW120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

IMW120R045M1 IMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET DrainFeatures pin 2 Very low switching losses Gate Threshold-free on state characteristic pin 1 Wide gate-source voltage range Sourcepin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage Fully controllable dV/dt Commutation robus