IMW120R220M1H Todos los transistores

 

IMW120R220M1H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IMW120R220M1H
   Código: 12M1H220
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 23 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5.7 V
   Qgⓘ - Carga de la puerta: 8.5 nC
   trⓘ - Tiempo de subida: 1.4 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.294 Ohm
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IMW120R220M1H Datasheet (PDF)

 ..1. Size:1124K  infineon
 imw120r220m1h.pdf pdf_icon

IMW120R220M1H

IMW120R220M1H IMW120R220M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 7.1. Size:1124K  infineon
 imw120r060m1h.pdf pdf_icon

IMW120R220M1H

IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 7.2. Size:1125K  infineon
 imw120r090m1h.pdf pdf_icon

IMW120R220M1H

IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control

 7.3. Size:1365K  infineon
 aimw120r045m1.pdf pdf_icon

IMW120R220M1H

AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SL12P03S | HFP9N50 | 2N5950 | SWB10N65K2 | KPCF8402 | 2SK3510 | STB200N6F3

 

 
Back to Top

 


 
.