IMW120R220M1H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IMW120R220M1H
Маркировка: 12M1H220
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 75 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 23 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5.7 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 8.5 nC
trⓘ - Время нарастания: 1.4 ns
Cossⓘ - Выходная емкость: 16 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.294 Ohm
Тип корпуса: TO247
Аналог (замена) для IMW120R220M1H
IMW120R220M1H Datasheet (PDF)
imw120r220m1h.pdf
IMW120R220M1H IMW120R220M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control
imw120r060m1h.pdf
IMW120R060M1H IMW120R060M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control
imw120r090m1h.pdf
IMW120R090M1H IMW120R090M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control
aimw120r045m1.pdf
AIMW120R045M1 AIMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features Revolutionary semiconductor material - Silicon Carbide Very low switching losses Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on) 0V turn-off gate voltage Benchmark gate threshold voltage, V =4.5V GS(th) Fully c
imw120r140m1h.pdf
IMW120R140M1H IMW120R140M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control
imw120r350m1h.pdf
IMW120R350M1H IMW120R350M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control
imw120r030m1h.pdf
IMW120R030M1H IMW120R030M1H CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drainpin 2Features Gate Very low switching losses pin 1 Threshold-free on state characteristic Source Wide gate-source voltage range pin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage for easy and simple gate drive Fully control
imw120r045m1.pdf
IMW120R045M1 IMW120R045M1 CoolSiC 1200V SiC Trench MOSFET Silicon Carbide MOSFET DrainFeatures pin 2 Very low switching losses Gate Threshold-free on state characteristic pin 1 Wide gate-source voltage range Sourcepin 3 Benchmark gate threshold voltage, V = 4.5V GS(th) 0V turn-off gate voltage Fully controllable dV/dt Commutation robus
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
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