IPA029N06NM5S Todos los transistores

 ..1. Size:1051K  infineon
 ipa029n06nm5s.pdf

IPA029N06NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 60 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified

 4.1. Size:1794K  infineon
 ipa029n06n.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-Transistor, 60 V IPA029N06N Data Sheet Rev. 2.2 Final Power Management & Multimarket OptiMOSTM Power-Transistor, 60 V IPA029N06N TO-220-FP 1 Description Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel

 4.2. Size:201K  inchange semiconductor
 ipa029n06n.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA029N06N FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS

 9.1. Size:538K  infineon
 ipa028n08n3.pdf

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