All MOSFET. IPA029N06NM5S Datasheet

 

IPA029N06NM5S Datasheet and Replacement


   Type Designator: IPA029N06NM5S
   Marking Code: 029N065S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.3 V
   |Id| ⓘ - Maximum Drain Current: 87 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 56 nC
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
   Package: TO220FP
 

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IPA029N06NM5S Datasheet (PDF)

 ..1. Size:1051K  infineon
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IPA029N06NM5S

IPA029N06NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 60 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified

 4.1. Size:1794K  infineon
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IPA029N06NM5S

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-Transistor, 60 VIPA029N06NData SheetRev. 2.2FinalPower Management & MultimarketOptiMOSTM Power-Transistor, 60 VIPA029N06NTO-220-FP1 DescriptionFeatures Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel

 4.2. Size:201K  inchange semiconductor
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IPA029N06NM5S

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA029N06NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS

 9.1. Size:538K  infineon
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IPA029N06NM5S

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