IPA052N08NM5S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPA052N08NM5S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 64 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 490 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: TO220FP

Búsqueda de reemplazo de MOSFET IPA052N08NM5S

IPA052N08NM5S Datasheet (PDF)

..1. Size:1074K infineon
ipa052n08nm5s.pdf

IPA052N08NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 80 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified

9.1. Size:592K infineon
ipa057n08n3g.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 80VOptiMOS3 Power-TransistorIPA057N08N3 GData SheetRev. 2.2FinalPower Management & MultimarketIPA057N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switching and sync. rec.RDS(on),max 5.7 mW Optimized technology for DC/DC

9.2. Size:546K infineon
ipa057n06n3g ipa057n06n3 rev20.pdf

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9.3. Size:536K infineon
ipa057n08n3.pdf

# ! ! (TM) #:A03 B53 7 m D n) m xQ ( @D9=9J54 D538>?F5BD5BCDQ H35>5?B=1

9.4. Size:1083K infineon
ipa050n10nm5s.pdf

IPA050N10NM5SMOSFETPG-TO 220 FPOptiMOSTM 5 Power-Transistor, 100 VFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21Product validationQualified

9.5. Size:201K inchange semiconductor
ipa057n06n3.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA057N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

9.6. Size:256K inchange semiconductor
ipa057n08n3.pdf

isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3FEATURESLow drain-source on-resistance:RDS(on) 5.7m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SJ106

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