IPA052N08NM5S - описание и поиск аналогов

IPA052N08NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 80 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 80V OptiMOS 3 Power-Transistor IPA057N08N3 G Data Sheet Rev. 2.2 Final Power Management & Multimarket IPA057N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching and sync. rec. RDS(on),max 5.7 mW Optimized technology for DC/DC

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IPA050N10NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA057N06N3 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3 FEATURES Low drain-source on-resistance RDS(on) 5.7m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY