IPA083N10NM5S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA083N10NM5S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 340 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0083 Ohm
Encapsulados: TO220FP
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IPA083N10NM5S datasheet
ipa083n10nm5s.pdf
IPA083N10NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified
ipa083n10n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 TO-220-FP 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista
ipa083n10n5.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA083N10N5 FEATURES With To-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
ipa086n10n3g.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4 Final Power Management & Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 8.6 mW Excellent gate charge x R product (FOM) DS(on) ID 45 A
Otros transistores... IMZA65R048M1H , IMZA65R072M1H , IPA029N06NM5S , IPA040N06NM5S , IPA040N08NM5S , IPA050N10NM5S , IPA052N08NM5S , IPA060N06NM5S , 5N60 , IPA126N10NM3S , IPA320N20NM3S , IPA600N25NM3S , IPA60R060C7 , IPA60R060P7 , IPA60R080P7 , IPA60R099C7 , IPA60R099P7 .
History: STF15NM65N
History: STF15NM65N
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