IPA083N10NM5S Specs and Replacement
Type Designator: IPA083N10NM5S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: TO220FP
IPA083N10NM5S substitution
- MOSFET ⓘ Cross-Reference Search
IPA083N10NM5S datasheet
ipa083n10nm5s.pdf
IPA083N10NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified... See More ⇒
ipa083n10n5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 TO-220-FP 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista... See More ⇒
ipa083n10n5.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA083N10N5 FEATURES With To-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
ipa086n10n3g.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4 Final Power Management & Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 8.6 mW Excellent gate charge x R product (FOM) DS(on) ID 45 A... See More ⇒
Detailed specifications: IMZA65R048M1H, IMZA65R072M1H, IPA029N06NM5S, IPA040N06NM5S, IPA040N08NM5S, IPA050N10NM5S, IPA052N08NM5S, IPA060N06NM5S, 5N60, IPA126N10NM3S, IPA320N20NM3S, IPA600N25NM3S, IPA60R060C7, IPA60R060P7, IPA60R080P7, IPA60R099C7, IPA60R099P7
Keywords - IPA083N10NM5S MOSFET specs
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