IPA80R1K2P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPA80R1K2P7
   Código: 80R1K2P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220FP

Búsqueda de reemplazo de MOSFET IPA80R1K2P7

IPA80R1K2P7 Datasheet (PDF)

..1. Size:1179K infineon
ipa80r1k2p7.pdf

IPA80R1K2P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

6.1. Size:1042K infineon
ipa80r1k0ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R1K0CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R1K0CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

6.2. Size:1047K infineon
ipa80r1k4ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPA80R1K4CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPA80R1K4CETO-220 FP1 DescriptionCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combines safety with performan

6.3. Size:1182K infineon
ipa80r1k4p7.pdf

IPA80R1K4P7MOSFETPG-TO 220 FP800V CoolMOS P7 Power DeviceThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(o

6.4. Size:201K inchange semiconductor
ipa80r1k0ce.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R1K0CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

6.5. Size:201K inchange semiconductor
ipa80r1k4ce.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA80R1K4CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

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