IPA95R1K2P7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA95R1K2P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 950 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO220FP

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IPA95R1K2P7 datasheet

 ..1. Size:1087K  infineon
 ipa95r1k2p7.pdf pdf_icon

IPA95R1K2P7

IPA95R1K2P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D

 8.1. Size:1119K  infineon
 ipa95r450p7.pdf pdf_icon

IPA95R1K2P7

IPA95R450P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D

 8.2. Size:1113K  infineon
 ipa95r750p7.pdf pdf_icon

IPA95R1K2P7

IPA95R750P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D

 8.3. Size:279K  inchange semiconductor
 ipa95r450p7.pdf pdf_icon

IPA95R1K2P7

isc N-Channel MOSFET Transistor IPA95R450P7 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 950V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

MOSTRAR MÁS

Otros transistores... IPA80R1K2P7, IPA80R1K4P7, IPA80R280P7, IPA80R360P7, IPA80R450P7, IPA80R600P7, IPA80R750P7, IPA80R900P7, MMIS60R580P, IPA95R450P7, IPA95R750P7, IPAN60R125PFD7S, IPAN60R210PFD7S, IPAN60R280P7S, IPAN60R280PFD7S, IPAN60R360P7S, IPAN60R360PFD7S