IPA95R1K2P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPA95R1K2P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 27 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 950 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220FP

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IPA95R1K2P7 Datasheet (PDF)

..1. Size:1087K infineon
ipa95r1k2p7.pdf

IPA95R1K2P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

8.1. Size:1119K infineon
ipa95r450p7.pdf

IPA95R450P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

8.2. Size:1113K infineon
ipa95r750p7.pdf

IPA95R750P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

8.3. Size:279K inchange semiconductor
ipa95r450p7.pdf

isc N-Channel MOSFET Transistor IPA95R450P7FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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