Справочник MOSFET. IPA95R1K2P7

 

IPA95R1K2P7 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: IPA95R1K2P7
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 950 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 7 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
   Тип корпуса: TO220FP
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

IPA95R1K2P7 Datasheet (PDF)

 ..1. Size:1087K  infineon
 ipa95r1k2p7.pdf pdf_icon

IPA95R1K2P7

IPA95R1K2P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

 8.1. Size:1119K  infineon
 ipa95r450p7.pdf pdf_icon

IPA95R1K2P7

IPA95R450P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

 8.2. Size:1113K  infineon
 ipa95r750p7.pdf pdf_icon

IPA95R1K2P7

IPA95R750P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

 8.3. Size:279K  inchange semiconductor
 ipa95r450p7.pdf pdf_icon

IPA95R1K2P7

isc N-Channel MOSFET Transistor IPA95R450P7FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

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