IPA95R1K2P7 datasheet, аналоги, основные параметры

Наименование производителя: IPA95R1K2P7

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 27 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 950 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 7 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm

Тип корпуса: TO220FP

Аналог (замена) для IPA95R1K2P7

- подборⓘ MOSFET транзистора по параметрам

 

IPA95R1K2P7 даташит

 ..1. Size:1087K  infineon
 ipa95r1k2p7.pdf pdf_icon

IPA95R1K2P7

IPA95R1K2P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D

 8.1. Size:1119K  infineon
 ipa95r450p7.pdf pdf_icon

IPA95R1K2P7

IPA95R450P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D

 8.2. Size:1113K  infineon
 ipa95r750p7.pdf pdf_icon

IPA95R1K2P7

IPA95R750P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C D

 8.3. Size:279K  inchange semiconductor
 ipa95r450p7.pdf pdf_icon

IPA95R1K2P7

isc N-Channel MOSFET Transistor IPA95R450P7 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 950V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

ПОКАЗАТЬ ЕЩЁ

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