IPA95R450P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA95R450P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 950 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 16 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: TO220FP
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IPA95R450P7 Datasheet (PDF)
ipa95r450p7.pdf

IPA95R450P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD
ipa95r450p7.pdf

isc N-Channel MOSFET Transistor IPA95R450P7FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
ipa95r1k2p7.pdf

IPA95R1K2P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD
ipa95r750p7.pdf

IPA95R750P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD
Otros transistores... IPA80R1K4P7 , IPA80R280P7 , IPA80R360P7 , IPA80R450P7 , IPA80R600P7 , IPA80R750P7 , IPA80R900P7 , IPA95R1K2P7 , AO4468 , IPA95R750P7 , IPAN60R125PFD7S , IPAN60R210PFD7S , IPAN60R280P7S , IPAN60R280PFD7S , IPAN60R360P7S , IPAN60R360PFD7S , IPAN60R600P7S .
History: 2N65G-TF1-T | SVF20N60PN
History: 2N65G-TF1-T | SVF20N60PN



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