IPA95R450P7
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA95R450P7
Marking Code: 95R450P7
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 950
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 14
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 16
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package:
TO220FP
IPA95R450P7
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA95R450P7
Datasheet (PDF)
..1. Size:1119K infineon
ipa95r450p7.pdf
IPA95R450P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD
..2. Size:279K inchange semiconductor
ipa95r450p7.pdf
isc N-Channel MOSFET Transistor IPA95R450P7FEATURESDrain Current : I = 14A@ T =25D CDrain Source Voltage: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 0.45(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so
8.1. Size:1087K infineon
ipa95r1k2p7.pdf
IPA95R1K2P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD
8.2. Size:1113K infineon
ipa95r750p7.pdf
IPA95R750P7MOSFETPG-TO 220 FP950V CoolMOS P7 SJ Power DeviceThe latest 950V CoolMOS P7 series sets a new benchmark in 950Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD
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