IPAN60R600P7S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPAN60R600P7S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 21 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO220FP

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IPAN60R600P7S datasheet

 ..1. Size:1027K  infineon
 ipan60r600p7s.pdf pdf_icon

IPAN60R600P7S

IPAN60R600P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

 6.1. Size:727K  1
 ipan60r650ce.pdf pdf_icon

IPAN60R600P7S

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting

 6.2. Size:727K  infineon
 ipan60r650ce.pdf pdf_icon

IPAN60R600P7S

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting

 6.3. Size:222K  inchange semiconductor
 ipan60r650ce.pdf pdf_icon

IPAN60R600P7S

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPAN60R650CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATIN

MOSTRAR MÁS

Otros transistores... IPA95R450P7, IPA95R750P7, IPAN60R125PFD7S, IPAN60R210PFD7S, IPAN60R280P7S, IPAN60R280PFD7S, IPAN60R360P7S, IPAN60R360PFD7S, IRF740, IPAN70R360P7S, IPAN70R450P7S, IPAN70R600P7S, IPAN70R750P7S, IPAN70R900P7S, IPAN80R280P7, IPAN80R360P7, IPAN80R450P7