IPAN60R600P7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPAN60R600P7S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 21 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 7 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de IPAN60R600P7S MOSFET
IPAN60R600P7S Datasheet (PDF)
ipan60r600p7s.pdf

IPAN60R600P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ
ipan60r650ce.pdf

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting
ipan60r650ce.pdf

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting
ipan60r650ce.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPAN60R650CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATIN
Otros transistores... IPA95R450P7 , IPA95R750P7 , IPAN60R125PFD7S , IPAN60R210PFD7S , IPAN60R280P7S , IPAN60R280PFD7S , IPAN60R360P7S , IPAN60R360PFD7S , IRF740 , IPAN70R360P7S , IPAN70R450P7S , IPAN70R600P7S , IPAN70R750P7S , IPAN70R900P7S , IPAN80R280P7 , IPAN80R360P7 , IPAN80R450P7 .
History: HY3208P | HCS70R710ST | RUM002N02 | AFN1520 | RJK1021DPN | TSM9NB50CI | SIE864DF
History: HY3208P | HCS70R710ST | RUM002N02 | AFN1520 | RJK1021DPN | TSM9NB50CI | SIE864DF



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