IPAN60R600P7S Datasheet. Specs and Replacement

Type Designator: IPAN60R600P7S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO220FP

IPAN60R600P7S substitution

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IPAN60R600P7S datasheet

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IPAN60R600P7S

IPAN60R600P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ... See More ⇒

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IPAN60R600P7S

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

 6.2. Size:727K  infineon
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IPAN60R600P7S

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

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IPAN60R600P7S

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPAN60R650CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATIN... See More ⇒

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Detailed specifications: IPA95R450P7, IPA95R750P7, IPAN60R125PFD7S, IPAN60R210PFD7S, IPAN60R280P7S, IPAN60R280PFD7S, IPAN60R360P7S, IPAN60R360PFD7S, IRF740, IPAN70R360P7S, IPAN70R450P7S, IPAN70R600P7S, IPAN70R750P7S, IPAN70R900P7S, IPAN80R280P7, IPAN80R360P7, IPAN80R450P7

Keywords - IPAN60R600P7S MOSFET specs

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