IPAW60R280CE Todos los transistores

 

IPAW60R280CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPAW60R280CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO220FPWC
     - Selección de transistores por parámetros

 

IPAW60R280CE Datasheet (PDF)

 ..1. Size:1006K  infineon
 ipaw60r280ce.pdf pdf_icon

IPAW60R280CE

IPAW60R280CEMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

 4.1. Size:1094K  infineon
 ipaw60r280p7s.pdf pdf_icon

IPAW60R280CE

IPAW60R280P7SMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a

 7.1. Size:979K  infineon
 ipaw60r600ce.pdf pdf_icon

IPAW60R280CE

IPAW60R600CEMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

 7.2. Size:991K  infineon
 ipaw60r380ce.pdf pdf_icon

IPAW60R280CE

IPAW60R380CEMOSFETPG - TO220 FullPAK WideCreepage600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting market

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VS4614AS-A | SQJA86EP | FCPF360N65S3R0L | TSM4N80CZ | FQD3N30TF | IRFS640B | JFFM13N65D

 

 
Back to Top

 


 
.