IPAW60R280CE datasheet, аналоги, основные параметры
Наименование производителя: IPAW60R280CE
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 32 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 60 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO220FPWC
Аналог (замена) для IPAW60R280CE
- подборⓘ MOSFET транзистора по параметрам
IPAW60R280CE даташит
ipaw60r280ce.pdf
IPAW60R280CE MOSFET PG - TO220 FullPAK WideCreepage 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting market
ipaw60r280p7s.pdf
IPAW60R280P7S MOSFET PG - TO220 FullPAK WideCreepage 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a
ipaw60r600ce.pdf
IPAW60R600CE MOSFET PG - TO220 FullPAK WideCreepage 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting market
ipaw60r380ce.pdf
IPAW60R380CE MOSFET PG - TO220 FullPAK WideCreepage 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting market
Другие IGBT... IPAN70R600P7S, IPAN70R750P7S, IPAN70R900P7S, IPAN80R280P7, IPAN80R360P7, IPAN80R450P7, IPAW60R180P7S, IPAW60R190CE, IRFB4110, IPAW60R280P7S, IPAW60R380CE, IPAW60R600CE, IPAW60R600P7S, IPAW70R600CE, IPAW70R950CE, IPB017N10N5LF, IPB019N08N5
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