IPB120N03S4L-03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPB120N03S4L-03
   Código: 4N03L03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 55 nC
   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: TO263

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IPB120N03S4L-03 Datasheet (PDF)

0.1. Size:277K infineon
ipb120n03s4l-03.pdf

IPB120N03S4L-03OptiMOS-T2 Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel - Enhancement modeR 3mWDS(on),max Automotive AEC Q101 qualifiedI 120 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 Green package (lead free) 100% Avalanche testedType Package Ordering Code MarkingIPB120N03S4L-03 PG-TO263-3-2 -

6.1. Size:203K infineon
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Data Sheet IPB120N04S4L-02OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.7mID 120 AFeaturesPG-TO263-3-2 N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB120N04S4L-02 PG-TO263-3- 4N04L02

6.2. Size:225K infineon
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf

IPB120N08S4-03IPI120N08S4-03, IPP120N08S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 2.5mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

6.3. Size:170K infineon
ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf

IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

6.4. Size:159K infineon
ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf

IPB120N04S4-02IPI120N04S4-02, IPP120N04S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.8mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

6.5. Size:211K infineon
ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf

IPB120N08S4-04IPI120N08S4-04, IPP120N08S4-04OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 4.1mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

6.6. Size:737K infineon
ipb120n06ng ipp120n06ng.pdf

IPB120N06N G IPP120N06N G Power-TransistorProduct SummaryFeaturesV D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>=R 11 7 m + >= =O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' ! #) ' ' !Package O 1 O

6.7. Size:174K infineon
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IPB120N06S4-H1IPI120N06S4-H1, IPP120N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.1mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

6.8. Size:170K infineon
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6.9. Size:164K infineon
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6.10. Size:191K infineon
ipb120n04s3-02 ipi120n04s3-02 ipp120n04s3-02 ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf

IPB120N04S3-02IPI120N04S3-02, IPP120N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 2.0mDS(on),maxI 120 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rd

6.11. Size:170K infineon
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IPB120N06S4-02IPI120N06S4-02, IPP120N06S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.4mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

6.12. Size:159K infineon
ipb120n04s4-01 ipi120n04s4-01 ipp120n04s4-01 ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf

IPB120N04S4-01IPI120N04S4-01, IPP120N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR (SMD version) 1.5mDS(on),max I 120 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedTy

6.13. Size:263K infineon
ipb120n04s4-04.pdf

IPB120N04S4-04OptiMOS-T2 Power-TransistorProduct SummaryFeaturesV 40 VDS N-channel - Enhancement modeR 3.6mWDS(on),max Automotive AEC Q101 qualifiedI 120 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO263-3-2 Green package (lead free) 100% Avalanche testedType Package Ordering Code MarkingIPB120N04S4-04 PG-TO263-3-2 -

6.14. Size:856K cn vbsemi
ipb120n06ng.pdf

IPB120N06NGwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sou

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