IPB120N03S4L-03 datasheet, подбор замены

 0.1. Size:277K  infineon
 ipb120n03s4l-03.pdf 

IPB120N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V 30 V DS N-channel - Enhancement mode R 3 mW DS(on),max Automotive AEC Q101 qualified I 120 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 Green package (lead free) 100% Avalanche tested Type Package Ordering Code Marking IPB120N03S4L-03 PG-TO263-3-2 -

 6.1. Size:203K  infineon
 ipb120n04s4l-02.pdf 

Data Sheet IPB120N04S4L-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.7 m ID 120 A Features PG-TO263-3-2 N-channel Logic Level - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB120N04S4L-02 PG-TO263-3- 4N04L02

 6.2. Size:225K  infineon
 ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf 

IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 2.5 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 6.3. Size:170K  infineon
 ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf 

IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 6.4. Size:159K  infineon
 ipb120n04s4-02 ipi120n04s4-02 ipp120n04s4-02.pdf 

IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 6.5. Size:211K  infineon
 ipb120n08s4-04 ipi120n08s4-04 ipp120n08s4-04.pdf 

IPB120N08S4-04 IPI120N08S4-04, IPP120N08S4-04 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 4.1 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 6.6. Size:737K  infineon
 ipb120n06ng ipp120n06ng.pdf 

IPB120N06N G IPP120N06N G Power-Transistor Product Summary Features V D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= R 11 7 m + >= = O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' ! #) ' ' ! Package O 1 O

 6.7. Size:174K  infineon
 ipi120n06s4-h1 ipp120n06s4-h1 ipb120n06s4-h1.pdf 

IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.1 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 6.8. Size:170K  infineon
 ipb120n06s4-h1 ipi120n06s4-h1 ipp120n06s4-h1.pdf 

IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.1 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

 6.9. Size:164K  infineon
 ipi120n04s4-02 ipp120n04s4-02 ipb120n04s4-02.pdf 

IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.8 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 6.10. Size:191K  infineon
 ipb120n04s3-02 ipi120n04s3-02 ipp120n04s3-02 ipp120n04s3 ipb120n04s3 ipi120n04s3-02.pdf 

IPB120N04S3-02 IPI120N04S3-02, IPP120N04S3-02 OptiMOS -T Power-Transistor Product Summary V 40 V DS R (SMD version) 2.0 m DS(on),max I 120 A D Features N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rd

 6.11. Size:170K  infineon
 ipb120n06s4-02 ipi120n06s4-02 ipp120n06s4-02 ipp120n06s4 ipb120n06s4 ipi120n06s4-02.pdf 

IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.4 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 6.12. Size:159K  infineon
 ipb120n04s4-01 ipi120n04s4-01 ipp120n04s4-01 ipp120n04s4-01 ipb120n04s4-01 ipi120n04s4-01.pdf 

IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 1.5 m DS(on),max I 120 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

 6.13. Size:263K  infineon
 ipb120n04s4-04.pdf 

IPB120N04S4-04 OptiMOS -T2 Power-Transistor Product Summary Features V 40 V DS N-channel - Enhancement mode R 3.6 mW DS(on),max Automotive AEC Q101 qualified I 120 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 Green package (lead free) 100% Avalanche tested Type Package Ordering Code Marking IPB120N04S4-04 PG-TO263-3-2 -

 6.14. Size:856K  cn vbsemi
 ipb120n06ng.pdf 

IPB120N06NG www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 60 60 0.013 at VGS = 4.5 V 50 D D2PAK (TO-263) G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit VGS Gate-Sou