IAUC100N08S5N043 Todos los transistores

 

IAUC100N08S5N043 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IAUC100N08S5N043

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 490 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm

Encapsulados: TDSON-8

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IAUC100N08S5N043 datasheet

 0.1. Size:773K  infineon
iauc100n08s5n043.pdf pdf_icon

IAUC100N08S5N043

IAUC100N08S5N043 OptiMOS -5 Power-Transistor Product Summary VDS 80 V RDS(on) 4.3 mW ID 100 A Features N-channel - Enhancement mode PG-TDSON-8 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 1 100% Avalanche tested 1 Type Package Marking PG-TDSON-8 5N08043 IAUC100N08S5N043 Maximum ratings,

 5.1. Size:665K  infineon
iauc100n04s6n015.pdf pdf_icon

IAUC100N08S5N043

IAUC100N04S6N015 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.5 mW ID 100 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche teste

 5.2. Size:665K  infineon
iauc100n04s6l020.pdf pdf_icon

IAUC100N08S5N043

IAUC100N04S6L020 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 2.0 mW ID 100 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested

 5.3. Size:664K  infineon
iauc100n04s6l014.pdf pdf_icon

IAUC100N08S5N043

IAUC100N04S6L014 OptiMOS - 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.4 mW ID 100 A Features PG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche tested

Otros transistores... IAUA180N04S5N012 , IAUA200N04S5N010 , IAUC100N04S6L014 , IAUC100N04S6L020 , IAUC100N04S6L025 , IAUC100N04S6N015 , IAUC100N04S6N022 , IAUC100N04S6N028 , IRF2807 , IAUC100N10S5L040 , IAUC120N04S6L009 , IAUC120N04S6L012 , IAUC120N04S6N010 , IAUC120N04S6N013 , IAUC24N10S5L300 , IAUC28N08S5L230 , IAUC60N04S6L039 .

History: S2N7002KW | 2SJ154 | HU840U | JMSH0602AE

 

 

 


History: S2N7002KW | 2SJ154 | HU840U | JMSH0602AE

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