IAUC100N10S5L040 Todos los transistores

 

IAUC100N10S5L040 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IAUC100N10S5L040
   Código: 5N10L040
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 167 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 60 nC
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 660 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TDSON-8
 

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IAUC100N10S5L040 Datasheet (PDF)

 0.1. Size:563K  infineon
 iauc100n10s5l040.pdf pdf_icon

IAUC100N10S5L040

IAUC100N10S5L040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mWID 100 AFeatures N-channel - Enhancement mode - Logic levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5L040 PG-TDSON-8 5N10L040Maximum ratings, at T =25 C

 2.1. Size:227K  infineon
 iauc100n10s5n040.pdf pdf_icon

IAUC100N10S5L040

IAUC100N10S5N040OptiMOSTM-5 Power-TransistorProduct SummaryVDS 100 VRDS(on) 4mID 100 AFeatures N-channel - Enhancement mode - Normal levelPG-TDSON-8 AEC qualified MSL1 up to 260C peak reflow 100% Avalanche tested Feasible for automatic optical inspection (AOI)1Type Package MarkingIAUC100N10S5N040 PG-TDSON-8 5N1N040Maximum ratings, at T =25

 6.1. Size:665K  infineon
 iauc100n04s6n015.pdf pdf_icon

IAUC100N10S5L040

IAUC100N04S6N015OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 1.5mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche teste

 6.2. Size:665K  infineon
 iauc100n04s6l020.pdf pdf_icon

IAUC100N10S5L040

IAUC100N04S6L020OptiMOS- 6 Power-TransistorProduct SummaryVDS 40 VRDS(on),max 2.0mWID 100 AFeaturesPG-TDSON-8 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanche tested

MOSTRAR MÁS

Otros transistores... IAUA200N04S5N010 , IAUC100N04S6L014 , IAUC100N04S6L020 , IAUC100N04S6L025 , IAUC100N04S6N015 , IAUC100N04S6N022 , IAUC100N04S6N028 , IAUC100N08S5N043 , IRF2807 , IAUC120N04S6L009 , IAUC120N04S6L012 , IAUC120N04S6N010 , IAUC120N04S6N013 , IAUC24N10S5L300 , IAUC28N08S5L230 , IAUC60N04S6L039 , IAUC60N04S6N044 .

History: US5U1 | DHS015N06E | STT3418 | 2SK3199 | STP30NS15LFP

 

 
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