All MOSFET. IAUC100N10S5L040 Datasheet

 

IAUC100N10S5L040 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IAUC100N10S5L040
   Marking Code: 5N10L040
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TDSON-8

 IAUC100N10S5L040 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IAUC100N10S5L040 Datasheet (PDF)

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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