IPA60R360P7S Todos los transistores

 

IPA60R360P7S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPA60R360P7S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 22 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 10 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: TO220FP

 Búsqueda de reemplazo de MOSFET IPA60R360P7S

 

Principales características: IPA60R360P7S

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 ipa60r360p7s.pdf pdf_icon

IPA60R360P7S

IPA60R360P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ M

 3.1. Size:1082K  1
 ipa60r360p7.pdf pdf_icon

IPA60R360P7S

IPA60R360P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MO

 3.2. Size:1103K  infineon
 ipa60r360p7.pdf pdf_icon

IPA60R360P7S

IPA60R360P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET

 3.3. Size:237K  inchange semiconductor
 ipa60r360p7.pdf pdf_icon

IPA60R360P7S

isc N-Channel MOSFET Transistor IPA60R360P7 FEATURES Drain-source on-resistance RDS(on) 0.36 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

MOSTRAR MÁS

Otros transistores... IAUZ18N10S5L420 , IGLD60R070D1 , IGLD60R190D1 , IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IRFP064N , IPAN60R180P7S , IPAN65R650CE , IPB015N04N6 , IPB08CN10NG , IPB100N12S3-05 , IPB120N10S4-03 , IPB120N10S4-05 , IPB120P04P4L-03 .

History: STP30NM50N | PTN3006 | ZVN4210ASTOA | SI9955DY | PTD7N65 | ZVN4310ASTOA | PTP10HN10

 

 
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