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IPA60R360P7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA60R360P7S

Código: 60S360P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 22 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 13 nC

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 10 pF

Resistencia drenaje-fuente RDS(on): 0.36 Ohm

Empaquetado / Estuche: TO220FP

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IPA60R360P7S Datasheet (PDF)

0.1. ipa60r360p7s.pdf Size:894K _infineon

IPA60R360P7S
IPA60R360P7S

IPA60R360P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ M

3.1. ipa60r360p7.pdf Size:1082K _1

IPA60R360P7S
IPA60R360P7S

IPA60R360P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MO

3.2. ipa60r360p7.pdf Size:1103K _infineon

IPA60R360P7S
IPA60R360P7S

IPA60R360P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

 3.3. ipa60r360p7.pdf Size:237K _inchange_semiconductor

IPA60R360P7S
IPA60R360P7S

isc N-Channel MOSFET Transistor IPA60R360P7FEATURES Drain-source on-resistance:RDS(on) 0.36Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Otros transistores... P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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