All MOSFET. IPA60R360P7S Datasheet

 

IPA60R360P7S MOSFET. Datasheet pdf. Equivalent

Type Designator: IPA60R360P7S

Marking Code: 60S360P7

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 22 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 13 nC

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 10 pF

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: TO220FP

IPA60R360P7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPA60R360P7S Datasheet (PDF)

0.1. ipa60r360p7s.pdf Size:894K _infineon

IPA60R360P7S
IPA60R360P7S

IPA60R360P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ M

3.1. ipa60r360p7.pdf Size:1082K _1

IPA60R360P7S
IPA60R360P7S

IPA60R360P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MO

3.2. ipa60r360p7.pdf Size:1103K _infineon

IPA60R360P7S
IPA60R360P7S

IPA60R360P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

 3.3. ipa60r360p7.pdf Size:237K _inchange_semiconductor

IPA60R360P7S
IPA60R360P7S

isc N-Channel MOSFET Transistor IPA60R360P7FEATURES Drain-source on-resistance:RDS(on) 0.36Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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