IPAN60R180P7S Todos los transistores

 

IPAN60R180P7S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPAN60R180P7S

Código: 60S180P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 26 W

Tensión drenaje-fuente |Vds|: 600 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 18 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 25 nC

Tiempo de elevación (tr): 12 nS

Conductancia de drenaje-sustrato (Cd): 19 pF

Resistencia drenaje-fuente RDS(on): 0.18 Ohm

Empaquetado / Estuche: TO220FP

Búsqueda de reemplazo de MOSFET IPAN60R180P7S

 

IPAN60R180P7S Datasheet (PDF)

0.1. ipan60r180p7s.pdf Size:722K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R180P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

6.1. ipan60r125pfd7s.pdf Size:1130K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R125PFD7SMOSFETPG-TO 220 FP600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,mot

 7.1. ipan60r650ce.pdf Size:727K _1

IPAN60R180P7S
IPAN60R180P7S

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

7.2. ipan60r800ce.pdf Size:728K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R800CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

 7.3. ipan60r360p7s.pdf Size:1038K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R360P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

7.4. ipan60r280pfd7s.pdf Size:1177K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R280PFD7SMOSFETPG-TO 220 FP600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,mot

 7.5. ipan60r210pfd7s.pdf Size:1115K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R210PFD7SMOSFETPG-TO 220 FP600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,mot

7.6. ipan60r650ce.pdf Size:727K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R650CEMOSFETPG-TO 220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting

7.7. ipan60r600p7s.pdf Size:1027K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R600P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

7.8. ipan60r280p7s.pdf Size:1044K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R280P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ

7.9. ipan60r360pfd7s.pdf Size:1153K _infineon

IPAN60R180P7S
IPAN60R180P7S

IPAN60R360PFD7SMOSFETPG-TO 220 FP600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,mot

7.10. ipan60r800ce.pdf Size:201K _inchange_semiconductor

IPAN60R180P7S
IPAN60R180P7S

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPAN60R800CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

7.11. ipan60r650ce.pdf Size:222K _inchange_semiconductor

IPAN60R180P7S
IPAN60R180P7S

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPAN60R650CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATIN

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