All MOSFET. IPAN60R180P7S Equivalents Search

 

IPAN60R180P7S Spec and Replacement


   Type Designator: IPAN60R180P7S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 19 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220FP

 IPAN60R180P7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPAN60R180P7S Specs

 ..1. Size:722K  infineon
ipan60r180p7s.pdf pdf_icon

IPAN60R180P7S

IPAN60R180P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ... See More ⇒

 6.1. Size:1130K  infineon
ipan60r125pfd7s.pdf pdf_icon

IPAN60R180P7S

IPAN60R125PFD7S MOSFET PG-TO 220 FP 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, mot... See More ⇒

 7.1. Size:727K  1
ipan60r650ce.pdf pdf_icon

IPAN60R180P7S

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

 7.2. Size:727K  infineon
ipan60r650ce.pdf pdf_icon

IPAN60R180P7S

IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒

Detailed specifications: IGLD60R070D1 , IGLD60R190D1 , IGO60R070D1 , IGOT60R070D1 , IGT60R070D1 , IGT60R190D1S , IPA60R180P7S , IPA60R360P7S , AO4468 , IPAN65R650CE , IPB015N04N6 , IPB08CN10NG , IPB100N12S3-05 , IPB120N10S4-03 , IPB120N10S4-05 , IPB120P04P4L-03 , IPB180N04S4L-01 .

History: AP4455GYT | TIS75

Keywords - IPAN60R180P7S MOSFET specs

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