IPAN60R180P7S Spec and Replacement
Type Designator: IPAN60R180P7S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 26
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 18
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 19
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
TO220FP
IPAN60R180P7S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPAN60R180P7S Specs
..1. Size:722K infineon
ipan60r180p7s.pdf 
IPAN60R180P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ... See More ⇒
6.1. Size:1130K infineon
ipan60r125pfd7s.pdf 
IPAN60R125PFD7S MOSFET PG-TO 220 FP 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, mot... See More ⇒
7.1. Size:727K 1
ipan60r650ce.pdf 
IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒
7.2. Size:727K infineon
ipan60r650ce.pdf 
IPAN60R650CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒
7.3. Size:1027K infineon
ipan60r600p7s.pdf 
IPAN60R600P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ... See More ⇒
7.4. Size:1044K infineon
ipan60r280p7s.pdf 
IPAN60R280P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ... See More ⇒
7.5. Size:1177K infineon
ipan60r280pfd7s.pdf 
IPAN60R280PFD7S MOSFET PG-TO 220 FP 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, mot... See More ⇒
7.6. Size:1038K infineon
ipan60r360p7s.pdf 
IPAN60R360P7S MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ... See More ⇒
7.7. Size:728K infineon
ipan60r800ce.pdf 
IPAN60R800CE MOSFET PG-TO 220 FP 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting... See More ⇒
7.8. Size:1153K infineon
ipan60r360pfd7s.pdf 
IPAN60R360PFD7S MOSFET PG-TO 220 FP 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, mot... See More ⇒
7.9. Size:1115K infineon
ipan60r210pfd7s.pdf 
IPAN60R210PFD7S MOSFET PG-TO 220 FP 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, mot... See More ⇒
7.10. Size:222K inchange semiconductor
ipan60r650ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPAN60R650CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATIN... See More ⇒
7.11. Size:201K inchange semiconductor
ipan60r800ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPAN60R800CE FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
Detailed specifications: IGLD60R070D1
, IGLD60R190D1
, IGO60R070D1
, IGOT60R070D1
, IGT60R070D1
, IGT60R190D1S
, IPA60R180P7S
, IPA60R360P7S
, AO4468
, IPAN65R650CE
, IPB015N04N6
, IPB08CN10NG
, IPB100N12S3-05
, IPB120N10S4-03
, IPB120N10S4-05
, IPB120P04P4L-03
, IPB180N04S4L-01
.
History: AP4455GYT
| TIS75
Keywords - IPAN60R180P7S MOSFET specs
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IPAN60R180P7S equivalent finder
IPAN60R180P7S lookup
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