2SK1954 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1958N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHINGThe 2SK1958 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm)it can be driven by a voltage as low as 1.5 V and it is not2.1 0.1necessary to consider a drive current, this FET is ideal as an1.25 0.1actuator for low-current portable systems such as headphonestereos and

2SK1957 Silicon N Channel MOS FET REJ03G0988-0200 (Previous: ADE-208-1336) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0003AD-A(Package name

2SK1952Silicon N Channel MOS FETApplicationTO220FMHigh speed power switchingFeatures Low onresistance High speed switching212 Low drive current3 4 V gate drive device can be driven from15 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source Avalanche ratings3Table 1 Absolute Maximum Ratings (

SMD Type MOSFETN-Channel MOSFET2SK19591.70 0.1 Features VDS (V) = 16V ID = 2ADrain (D) RDS(ON) 3.2 (VGS = 1.5V)0.42 0.10.46 0.1 RDS(ON) 0.5 (VGS = 4V)InternalGate (G)diodeGate1.Gateprotection2.Draindiode3.SourceSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16