2SK1954 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1954

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 180 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO252

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2SK1954 datasheet

 0.1. Size:2263K  renesas
 2sk1954-z.pdf pdf_icon

2SK1954

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:60K  1
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2SK1954

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm) it can be driven by a voltage as low as 1.5 V and it is not 2.1 0.1 necessary to consider a drive current, this FET is ideal as an 1.25 0.1 actuator for low-current portable systems such as headphone stereos and

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 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf pdf_icon

2SK1954

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2SK1954

MOSTRAR MÁS

Otros transistores... 2SK1850, 2SK1851, 2SK1852, 2SK1853, 2SK1917-MR, 2SK193, 2SK195, 2SK1953, 10N60, 2SK1958, 2SK1959, 2SK1960, 2SK1988, 2SK1989, 2SK1990, 2SK1991, 2SK1992