IPB08CN10NG Todos los transistores

 

IPB08CN10NG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB08CN10NG

Código: 08CN10N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 167 W

Tensión drenaje-fuente |Vds|: 100 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 95 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 75 nC

Tiempo de elevación (tr): 24 nS

Conductancia de drenaje-sustrato (Cd): 757 pF

Resistencia drenaje-fuente RDS(on): 0.0082 Ohm

Empaquetado / Estuche: TO263

Búsqueda de reemplazo de MOSFET IPB08CN10NG

 

IPB08CN10NG Datasheet (PDF)

0.1. ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf Size:527K _infineon

IPB08CN10NG
IPB08CN10NG

IPB08CN10N GIPI08CN10N G IPP08CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 8.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 95 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

7.1. ipi08cne8n-g ipp08cne8n-g ipb08cne8n-g ipp08cne8n7.pdf Size:772K _infineon

IPB08CN10NG
IPB08CN10NG

IPB08CNE8N GIPI08CNE8N G IPP08CNE8N G 2 Power-TransistorProduct SummaryFeaturesV D R ( 492??6= ?@C>2= =6G6=R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n)I DR /6CJ =@H @? C6D:DE2?46 RD n)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8

 9.1. ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf Size:778K _infineon

IPB08CN10NG
IPB08CN10NG

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

9.2. ipb085n06lg ipp085n06lg.pdf Size:739K _infineon

IPB08CN10NG
IPB08CN10NG

IPB085N06L G IPP085N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

 9.3. ipb081n06l3g ipp084n06l3g ipi084n06l3g ipi084n06l3g.pdf Size:427K _infineon

IPB08CN10NG
IPB08CN10NG

Type IPB081N06L3 G IPP084N06L3 GIPI084N06L3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max (SMD) 8.1m Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS complian

9.4. ipb080n03l.pdf Size:726K _infineon

IPB08CN10NG
IPB08CN10NG

Type IPP080N03L GIPB080N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 8.0mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.5. ipb085n06lg.pdf Size:737K _infineon

IPB08CN10NG
IPB08CN10NG

IPB085N06L G IPP085N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

9.6. ipb083n15n5lf.pdf Size:908K _infineon

IPB08CN10NG
IPB08CN10NG

IPB083N15N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 150 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain

9.7. ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf Size:757K _infineon

IPB08CN10NG
IPB08CN10NG

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

9.8. ipb080n06ng ipp080n06ng.pdf Size:739K _infineon

IPB08CN10NG
IPB08CN10NG

IPB080N06N G IPP080N06N G Power-TransistorProduct SummaryFeaturesV D P &?F 71C5 381A75 6?A 61BC BF9C389>7 1@@BR 7 7 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C >?A=1

9.9. ipb081n06l3g ipp084n06l3g ipb081n06l3 ipp084n06l3 ipb084n06l33.pdf Size:683K _infineon

IPB08CN10NG
IPB08CN10NG

pe IPB081N06L3 G IPP084N06L3 G 3 Power-TransistorProduct SummaryFeaturesV D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 1 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CDI DR I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:@?

9.10. ipb080n03l.pdf Size:243K _inchange_semiconductor

IPB08CN10NG
IPB08CN10NG

isc N-Channel MOSFET Transistor IPB080N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

9.11. ipb083n10n3.pdf Size:258K _inchange_semiconductor

IPB08CN10NG
IPB08CN10NG

Isc N-Channel MOSFET Transistor IPB083N10N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

9.12. ipb083n15n5lf.pdf Size:258K _inchange_semiconductor

IPB08CN10NG
IPB08CN10NG

isc N-Channel MOSFET Transistor IPB083N15N5LFFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

9.13. ipb081n06l3.pdf Size:258K _inchange_semiconductor

IPB08CN10NG
IPB08CN10NG

Isc N-Channel MOSFET Transistor IPB081N06L3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

Otros transistores... P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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