IPB180N04S4L-01 Todos los transistores

 

IPB180N04S4L-01 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB180N04S4L-01

Código: 4N04L01

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 188 W

Tensión drenaje-fuente |Vds|: 40 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 180 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.2 V

Carga de compuerta (Qg): 188 nC

Tiempo de elevación (tr): 21 nS

Conductancia de drenaje-sustrato (Cd): 2400 pF

Resistencia drenaje-fuente RDS(on): 0.0012 Ohm

Empaquetado / Estuche: TO263-7

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IPB180N04S4L-01 Datasheet (PDF)

0.1. ipb180n04s4l-01.pdf Size:213K _infineon

IPB180N04S4L-01
IPB180N04S4L-01

Data Sheet IPB180N04S4L-01OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.2mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-01 PG-TO263-7-3 4N04L01Ma

1.1. ipb180n04s4l-h0.pdf Size:213K _infineon

IPB180N04S4L-01
IPB180N04S4L-01

Data Sheet IPB180N04S4L-H0OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.0mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-H0 PG-TO263-7-3 4N04LH0Ma

 3.1. ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf Size:162K _infineon

IPB180N04S4L-01
IPB180N04S4L-01

IPB180N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.3mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-01 PG-TO263-7-3 4N0401

3.2. ipb180n04s4-00 ds 1 0.pdf Size:162K _infineon

IPB180N04S4L-01
IPB180N04S4L-01

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.98mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N040

 3.3. ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf Size:162K _infineon

IPB180N04S4L-01
IPB180N04S4L-01

IPB180N04S4-H0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.1mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-H0 PG-TO263-7-3 4N04H0

3.4. ipb180n04s4-00.pdf Size:351K _infineon

IPB180N04S4L-01
IPB180N04S4L-01

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.98mWID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N0400Maxim

Otros transistores... P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , IRF1404 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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