Справочник MOSFET. IPB180N04S4L-01

 

IPB180N04S4L-01 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPB180N04S4L-01
   Маркировка: 4N04L01
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 188 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 188 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 2400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm
   Тип корпуса: TO263-7

 Аналог (замена) для IPB180N04S4L-01

 

 

IPB180N04S4L-01 Datasheet (PDF)

 0.1. Size:213K  infineon
 ipb180n04s4l-01.pdf

IPB180N04S4L-01 IPB180N04S4L-01

Data Sheet IPB180N04S4L-01OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.2mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-01 PG-TO263-7-3 4N04L01Ma

 1.1. Size:213K  infineon
 ipb180n04s4l-h0.pdf

IPB180N04S4L-01 IPB180N04S4L-01

Data Sheet IPB180N04S4L-H0OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.0mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-H0 PG-TO263-7-3 4N04LH0Ma

 3.1. Size:351K  infineon
 ipb180n04s4-00.pdf

IPB180N04S4L-01 IPB180N04S4L-01

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.98mWID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N0400Maxim

 3.2. Size:162K  infineon
 ipb180n04s4-00 ds 1 0.pdf

IPB180N04S4L-01 IPB180N04S4L-01

IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.98mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N040

 3.3. Size:162K  infineon
 ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf

IPB180N04S4L-01 IPB180N04S4L-01

IPB180N04S4-H0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.1mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-H0 PG-TO263-7-3 4N04H0

 3.4. Size:162K  infineon
 ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf

IPB180N04S4L-01 IPB180N04S4L-01

IPB180N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.3mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-01 PG-TO263-7-3 4N0401

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