IPB180N04S4L-H0 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB180N04S4L-H0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 3070 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.001 Ohm
Encapsulados: TO263-7
Búsqueda de reemplazo de IPB180N04S4L-H0 MOSFET
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IPB180N04S4L-H0 datasheet
ipb180n04s4l-h0.pdf
Data Sheet IPB180N04S4L-H0 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.0 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-H0 PG-TO263-7-3 4N04LH0 Ma
ipb180n04s4l-01.pdf
Data Sheet IPB180N04S4L-01 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.2 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-01 PG-TO263-7-3 4N04L01 Ma
ipb180n04s4-00.pdf
IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim
ipb180n04s4-00 ds 1 0.pdf
IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.98 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N040
Otros transistores... IPAN65R650CE , IPB015N04N6 , IPB08CN10NG , IPB100N12S3-05 , IPB120N10S4-03 , IPB120N10S4-05 , IPB120P04P4L-03 , IPB180N04S4L-01 , 50N06 , IPB180N08S4-02 , IPB180N10S4-02 , IPB180N10S4-03 , IPB180P04P4-03 , IPB180P04P4L-02 , IPB240N03S4L-R8 , IPB240N04S4-1R0 , IPB240N04S4-R9 .
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Liste
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