IPB180N10S4-02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB180N10S4-02
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 9 nS
Cossⓘ - Capacitancia de salida: 3660 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0025 Ohm
Encapsulados: TO263-7
Búsqueda de reemplazo de IPB180N10S4-02 MOSFET
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IPB180N10S4-02 datasheet
1.1. Size:256K infineon
ipb180n10s4-03.pdf 
IPB180N10S4-03 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on) 3.3 mW ID 180 A Features N-channel - Normal Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N10S4-03 PG-TO263-7-3 4N1003 Maximum ratin
7.1. Size:351K infineon
ipb180n04s4-00.pdf
IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.98 mW ID 180 A Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N0400 Maxim
7.2. Size:161K infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf
IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 0.95 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-H0 PG-TO263-7-3 4N
7.3. Size:201K infineon
ipb180n08s4-02.pdf
IPB180N08S4-02 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R 2.2 mW DS(on),max I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N08
7.4. Size:176K infineon
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf
IPB180N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 1.7 m DS(on),max I 180 A D Features PG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high ID Type Package Marking IPB180N0
7.5. Size:162K infineon
ipb180n04s4-00 ds 1 0.pdf
IPB180N04S4-00 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 0.98 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-00 PG-TO263-7-3 4N040
7.6. Size:162K infineon
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf
IPB180N04S4-H0 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.1 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0
7.7. Size:213K infineon
ipb180n04s4l-01.pdf
Data Sheet IPB180N04S4L-01 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.2 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-01 PG-TO263-7-3 4N04L01 Ma
7.8. Size:213K infineon
ipb180n04s4l-h0.pdf
Data Sheet IPB180N04S4L-H0 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 1.0 m ID 180 A Features N-channel Logic Level - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB180N04S4L-H0 PG-TO263-7-3 4N04LH0 Ma
7.9. Size:183K infineon
ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf
IPB180N04S3-02 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 1.5 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Marking Package IPB180N04S3-02 PG-
7.10. Size:162K infineon
ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf
IPB180N04S4-01 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 1.3 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N04S4-01 PG-TO263-7-3 4N0401
7.11. Size:161K infineon
ipb180n03s4l-01 ipb180n03s4l-01 ds 1 0.pdf
IPB180N03S4L-01 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 1.05 m DS(on) I 180 A D Features N-channel - Enhancement mode PG-TO263-7-3 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPB180N03S4L-01 PG-TO263-7-3 4N
Otros transistores... IPB08CN10NG, IPB100N12S3-05, IPB120N10S4-03, IPB120N10S4-05, IPB120P04P4L-03, IPB180N04S4L-01, IPB180N04S4L-H0, IPB180N08S4-02, IRFZ44, IPB180N10S4-03, IPB180P04P4-03, IPB180P04P4L-02, IPB240N03S4L-R8, IPB240N04S4-1R0, IPB240N04S4-R9, IPB35N10S3L-26, IPB50N12S3L-15
