IPB180N10S4-02
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPB180N10S4-02
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 300
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 180
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 9
ns
Cossⓘ - Выходная емкость: 3660
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0025
Ohm
Тип корпуса:
TO263-7
Аналог (замена) для IPB180N10S4-02
-
подбор ⓘ MOSFET транзистора по параметрам
IPB180N10S4-02
Datasheet (PDF)
..1. Size:204K infineon
ipb180n10s4-02.pdf 
IPB180N10S4-02OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on) 2.5mID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N10S4-02 PG-TO263-7-3 4N1002Maximum ratings, at T =25
1.1. Size:256K infineon
ipb180n10s4-03.pdf 
IPB180N10S4-03OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on) 3.3mWID 180 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N10S4-03 PG-TO263-7-3 4N1003Maximum ratin
7.1. Size:351K infineon
ipb180n04s4-00.pdf 
IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 0.98mWID 180 AFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N0400Maxim
7.2. Size:161K infineon
ipb180n03s4l-h0 ipb180n03s4l-h0 ds 1 0.pdf 
IPB180N03S4L-H0OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 0.95mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-H0 PG-TO263-7-3 4N
7.3. Size:201K infineon
ipb180n08s4-02.pdf 
IPB180N08S4-02OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR 2.2mWDS(on),maxI 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high IDType Package MarkingIPB180N08
7.4. Size:176K infineon
ipb180n06s4-h1 ipb180n06s4-h1 ds 10.pdf 
IPB180N06S4-H1OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR 1.7mDS(on),maxI 180 ADFeaturesPG-TO263-7-3 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Ultra high IDType Package MarkingIPB180N0
7.5. Size:162K infineon
ipb180n04s4-00 ds 1 0.pdf 
IPB180N04S4-00OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 0.98mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-00 PG-TO263-7-3 4N040
7.6. Size:162K infineon
ipb180n04s4-h0 ipb180n04s4-h0 ds 1 0.pdf 
IPB180N04S4-H0OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.1mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-H0 PG-TO263-7-3 4N04H0
7.7. Size:213K infineon
ipb180n04s4l-01.pdf 
Data Sheet IPB180N04S4L-01OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.2mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-01 PG-TO263-7-3 4N04L01Ma
7.8. Size:213K infineon
ipb180n04s4l-h0.pdf 
Data Sheet IPB180N04S4L-H0OptiMOSTM-T2 Power-TransistorProduct SummaryVDS 40 VRDS(on) 1.0mID 180 AFeatures N-channel Logic Level - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPB180N04S4L-H0 PG-TO263-7-3 4N04LH0Ma
7.9. Size:183K infineon
ipb180n04s3-02 ipb180n04s3-02 ds 1 0.pdf 
IPB180N04S3-02OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR 1.5mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType MarkingPackageIPB180N04S3-02 PG-
7.10. Size:162K infineon
ipb180n04s4-01 ipb180n04s4-01 ds 1 0.pdf 
IPB180N04S4-01OptiMOS-T2 Power-TransistorProduct SummaryV 40 VDSR 1.3mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N04S4-01 PG-TO263-7-3 4N0401
7.11. Size:161K infineon
ipb180n03s4l-01 ipb180n03s4l-01 ds 1 0.pdf 
IPB180N03S4L-01OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 1.05mDS(on)I 180 ADFeatures N-channel - Enhancement modePG-TO263-7-3 AEC qualified MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPB180N03S4L-01 PG-TO263-7-3 4N
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History: IXFH30N50Q3
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