STD1NA60T4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD1NA60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD1NA60 600 V

STD1NA60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTD1NA60 600 V

STD1NC60N-CHANNEL 600V - 7 - 1.4A - DPAK/IPAKPowerMeshII MOSFETTYPE VDSS RDS(on) IDSTD1NC60 600 V

STD1NB80-1N - CHANNEL 800V - 16 - 1A - IPAKPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTD1NB80-1 800 V

STQ1NK80ZR-AP - STN1NK80ZSTD1NK80Z - STD1NK80Z-1N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID Pw2STQ1NK80ZR-AP 800 V

STQ1NK80ZR-AP - STN1NK80ZSTD1NK80Z - STD1NK80Z-1N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAKZener - Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID Pw2STQ1NK80ZR-AP 800 V

STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V

STD1NK60 - STD1NK60-1STQ1HNK60R - STN1HNK60N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTD1NK60 600 V

STD1NK60T4 N-channel 600 V, 7.3 typ., 1 A SuperMESH Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTD1NK60T4 600 V 8.5 1 A 30 W Extremely high dv/dt capability ESD improved capability 100% avalanche tested Gate charge minimized Figure 1: Internal schematic diagram Applications L