IPB60R125CFD7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB60R125CFD7
Código: 60R125F7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 92 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 18 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 36 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 28 pF
Resistencia entre drenaje y fuente RDS(on): 0.125 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET IPB60R125CFD7
IPB60R125CFD7 Datasheet (PDF)
ipb60r125cfd7.pdf
IPB60R125CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s
ipb60r125cp.pdf
IPB60R125CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR 0.125DS(on),max Ultra low gate chargeQ 53 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is specially designe
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj
ipb60r125cpa.pdf
IPB60R125CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR 0.125DS(on),max Ultra low gate chargeQ 53 nCg,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO263 Pb-free lead plating; RoHS compliantCoolMOS CP is specially designe
ipb60r125c6.pdf
Isc N-Channel MOSFET Transistor IPB60R125C6FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
ipb60r125cp.pdf
Isc N-Channel MOSFET Transistor IPB60R125CPFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
