IPB60R125CFD7 - описание и поиск аналогов

 ..1. Size:1238K  infineon
 ipb60r125cfd7.pdf 

IPB60R125CFD7 MOSFET D PAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

 4.1. Size:1396K  infineon
 ipb60r125c6.pdf 

MOSFET + =L9D - PA

 4.2. Size:931K  infineon
 ipb60r125cp.pdf 

IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R 0.125 DS(on),max Ultra low gate charge Q 53 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is specially designe

 4.3. Size:1257K  infineon
 ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf 

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj

 4.4. Size:357K  infineon
 ipb60r125cpa.pdf 

IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R 0.125 DS(on),max Ultra low gate charge Q 53 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is specially designe

 4.5. Size:258K  inchange semiconductor
 ipb60r125c6.pdf 

Isc N-Channel MOSFET Transistor IPB60R125C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 4.6. Size:258K  inchange semiconductor
 ipb60r125cp.pdf 

Isc N-Channel MOSFET Transistor IPB60R125CP FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V