STD2NA60T4 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD2NA60T4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD2NA60T4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 2.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 57 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm

Encapsulados: DPAK

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STD2NA60T4 datasheet

..1. Size:407K 1
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STD2NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD2NA60 600 V

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STD2NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD2NA60 600 V

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STD2NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NA50 500 V

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std2nk90zt4.pdf pdf_icon

STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) 3 3 1 2 STD2NK90Z 900V

9.3. Size:598K st
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STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-channel 900V - 5 - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) 3 3 1 2 STD2NK90Z 900V

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STD2NK70Z STD2NK70Z-1 N-channel 700V - 6 - 1.6 A - DPAK/IPAK Zener protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw STD2NK70Z 700V 7 1.6A 45W STD2NK70Z-1 700V 7 1.6A 45W 3 3 2 1 Extremely high dv/dt capability 1 ESD improved capability DPAK IPAK 100% avalanche tested New high voltage benchmark Gate charge minimized Des

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STD2N62K3, STF2N62K3, STU2N62K3 Datasheet N-channel 620 V, 2.9 typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features VDS RDS(on)max. ID Order code Package STD2N62K3 DPAK STF2N62K3 620 V 3.6 2.2 A TO-220FP STU2N62K3 IPAK D(2, TAB) 100% avalanche tested Extremely high dv/dt capability Very low intrinsic capacitance G(1) Improved

9.6. Size:557K st
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STD2NK90Z-1, STD2NK90ZT4, STP2NK90Z Datasheet N-channel 900 V, 5 typ., 2.1 A SuperMESH Power MOSFETs in IPAK, DPAK and TO-220 packages Features TAB TAB 3 2 VDS RDS(on) max. ID Order code Package 1 3 2 IPAK DPAK 1 STD2NK90Z-1 IPAK TAB STD2NK90ZT4 900 V 6.5 2.1 A DPAK STP2NK90Z TO-220 Extremely high dv/dt capability 3 TO-220 2 1 100% avalanche tested Ga

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STD2NC50 STD2NC50-1 N-CHANNEL 500V - 3 - 2.2A DPAK/IPAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STD2NC50 500 V

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STD2NC40-1 N-CHANNEL 400V - 4.7 - 1.5A IPAK PowerMesh II MOSFET TYPE VDSS RDS(on) ID STD2NC40-1 400V

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STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1 - 1.5 A IPAK / TO-92 SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STD2NC45-1 450 V

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9.18. Size:274K st
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STD2NB25 N - CHANNEL 250V - 1.7 - 2A - IPAK/DPAK PowerMESH MOSFET TYPE VDSS RDS(on) ID STD2NB25 250 V

9.19. Size:453K st
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9.20. Size:174K st
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STB2N62K3, STD2N62K3, STF2N62K3, STP2N62K3, STU2N62K3 N-channel 620 V, 3 , 2.2 A SuperMESH3 Power MOSFET in D PAK, DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data Features TAB RDS(on) Order codes VDSS max ID PTOT 3 2 3 1 1 STB2N62K3 TAB 45 W IPAK D PAK STD2N62K3 3 TAB STF2N62K3 620 V

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9.23. Size:447K st
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STD2NC70Z STD2NC70Z-1 N-CHANNEL 700V - 4.1 - 2.3A DPAK/IPAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS(on) ID STD2NC70Z 700V

9.24. Size:451K st
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9.25. Size:47K st
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9.26. Size:283K st
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9.27. Size:256K st
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STD2NC45-1 N-channel 450 V, 4.1 , 1.5 A, IPAK SuperMESH Power MOSFET Features Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark 3 2 1 Application IPAK Switching applications Description The SuperMESH series is obtained through an extreme optimization of ST s well established strip-based PowerM

9.28. Size:474K st
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9.29. Size:853K cn vbsemi
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STD2NB60T4 www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS

Otros transistores... STD17N06T4 , STD1NA60-1 , STD1NA60T4 , STD20N06-1 , STD20N06T4 , STD2N50-1 , STD2N50T4 , STD2NA60-1 , IRFP064N , STD3N25-1 , STD3N25T4 , STD3N30-1 , STD3N30L , STD3N30L-1 , STD3N30LT4 , STD3N30T4 , STD3NA50-1 .