STD2NA60T4 Datasheet. Specs and Replacement
Type Designator: STD2NA60T4 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 57 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: DPAK
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STD2NA60T4 datasheet
6.1. Size:407K st
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9.29. Size:853K cn vbsemi
std2nb60t4.pdf
STD2NB60T4 www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS... See More ⇒
Detailed specifications: STD17N06T4, STD1NA60-1, STD1NA60T4, STD20N06-1, STD20N06T4, STD2N50-1, STD2N50T4, STD2NA60-1, AON6426, STD3N25-1, STD3N25T4, STD3N30-1, STD3N30L, STD3N30L-1, STD3N30LT4, STD3N30T4, STD3NA50-1
Keywords - STD2NA60T4 MOSFET specs
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