IPD70N12S3-11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD70N12S3-11 Datasheet (PDF)

..1. Size:361K infineon
ipd70n12s3-11.pdf pdf_icon

IPD70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.1 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedTy

4.1. Size:394K infineon
ipd70n12s3l-12.pdf pdf_icon

IPD70N12S3L-12OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.5 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedT

7.1. Size:176K infineon
ipd70n10s3l-12 ipd70n10s3l-12 ds 1 1.pdf pdf_icon

IPD70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.5mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3L-12 PG-TO252-3-11 QN10L12

7.2. Size:175K infineon
ipd70n10s3-12 ipd70n10s3-12 ds 1 1.pdf pdf_icon

IPD70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.1mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3-12 PG-TO252-3-11 QN1012Max

Otros transistores... IPD60R1K5PFD7S , IPD60R210CFD7 , IPD60R210PFD7S , IPD60R280PFD7S , IPD60R2K0PFD7S , IPD60R360CFD7 , IPD60R600PFD7S , IPD650P06NM , CS150N03A8 , IPD70N12S3L-12 , IPD70P04P4L-08 , IPD70R1K4P7S , IPD70R360P7S , IPD70R600P7S , IPD80R1K4P7 , IPD80R280P7 , IPD80R2K0P7 .