IPD70N12S3-11 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IPD70N12S3-11
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 8 ns
Cossⓘ - Выходная емкость: 940 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0111 Ohm
Тип корпуса: TO252
Аналог (замена) для IPD70N12S3-11
IPD70N12S3-11 Datasheet (PDF)
ipd70n12s3-11.pdf

IPD70N12S3-11OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.1 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedTy
ipd70n12s3l-12.pdf

IPD70N12S3L-12OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 11.5 mW ID 70 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedT
ipd70n10s3l-12 ipd70n10s3l-12 ds 1 1.pdf

IPD70N10S3L-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.5mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3L-12 PG-TO252-3-11 QN10L12
ipd70n10s3-12 ipd70n10s3-12 ds 1 1.pdf

IPD70N10S3-12OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 11.1mWDS(on),maxI 70 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD70N10S3-12 PG-TO252-3-11 QN1012Max
Другие MOSFET... IPD60R1K5PFD7S , IPD60R210CFD7 , IPD60R210PFD7S , IPD60R280PFD7S , IPD60R2K0PFD7S , IPD60R360CFD7 , IPD60R600PFD7S , IPD650P06NM , CS150N03A8 , IPD70N12S3L-12 , IPD70P04P4L-08 , IPD70R1K4P7S , IPD70R360P7S , IPD70R600P7S , IPD80R1K4P7 , IPD80R280P7 , IPD80R2K0P7 .
History: FHF5N60A | TK39J60W5 | VS8068AD | SWMN4N65DD | L2N60D | WMO11N65SR
History: FHF5N60A | TK39J60W5 | VS8068AD | SWMN4N65DD | L2N60D | WMO11N65SR



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